IWBGPEAW 2017 - International Wide Bandgap Materials Power Electronics Applications Workshop (formerly ISiCPEAW)

Preliminary Programme 

Below you will soon find the preliminary programme for the two workshop days and the Sunday tutorial.
As you can see, most of the programme is yet to be established, so please stay tuned, and check this site once in a while...
The final programme will be distributed to all participants at the registration desk.

Please note:

The B2B Matchmaking runs in parallel with the presentations during the entire workshop.
In order to reduce collisions between your meetings and presentations you wish to attend:
Please check the programme and choose your matchmaking availability accordingly.

 

Sunday May 21; Tutorial

09:00 - 09:30
Registration, Coffee
   
09:30 - 10:45 SiC Devices

Mietek Bakowski and Jang-Kwon Lim, RISE Acreo AB:

  • Overview of device types and application areas
  • Development trends and challenges
  • Material and technology curves
  • Basic limitations
  • Reliability issues
  • Examples of simulation studies
 
10:45 - 11:30  System & Gate Drivers  

Hans-Peter Nee and Diane-Perle Sadik, Electrical Power and Energy Systems, KTH Royal Institute of Technology:

  • Drivers for SiC MOSFETs
  • Short-circuit protection
  • Aspects on reliability
 
11:30 - 13:00 Lunch    
13:00 - 13:45  System & Reliability

Hans-Peter Nee and Diane-Perle Sadik, Electrical Power and Energy Systems, KTH Royal Institute of Technology:

Examples of power converters:

  • 40 kW/>99.6 % efficient inverter
  • 6 kW/250 kHz DC/DC converter
  • 300 kW automotive inverter with MOSFET power modules
 
13:45 - 14:30
Packaging 1  

Tag Hammam, Swerea KIMAB and Yafan Zhang, RISE Acreo AB: 

SiC Power Electronics Packaging – an introduction:

  • Packaging – main function
  • Different types of packaging concepts
  • SiC die compared to Si die
  • Critical parts in a power module: Die bonding, Wire bonding,

Encapsulation, Electrical connections:

  • Thermal resistance from junction to heat sink
  • Mechanical stress and material fatigue
  • Example of commercial modules
 
14:30 - 14:45  Coffee    
14:45 - 15:15   Packaging 2 

Zsolt Toth-Pal, Swerea KIMAB: 

Failure Mechanisms and Reliability testing of SiC Power Components and Modules:

  • Classification of failure mechanisms
  • Review of some major SiC and application related failure mechanisms
  • Reliability and Ruggedness
  • Failure analysis methods
  • Reliability testing, prediction and modeling
 
15:15 - 16:00 Packaging 3

Klas Brinkfeldt, Swerea IVF and Konstantin Kostov, RISE Acreo AB: 

Sintered Silver Materials:

  • Material properties
  • Process
  • Reliability

Symmetric and low inductance packages for SiC

 
16:00  End of tutorial    
       

Monday May 22

08:30 - 09:00 Registration, Coffee
   
09:00 - 09:10 Welcome Mietek Bakowski, RISE Acreo AB
                                                              
09:10 - 09:40 Strategy

Key Note
Kunshan Yu, China Advanced Semicondutor Industry Innovation Alliance (CASA):
The current situation and the market opportunity
of wide bandgap power electronics in China

 

 

 

 

B2B Matchmaking
   

09:30 - 12:30

6 sessions

       
09:40 - 10:10    Key Note
Hajime Okumura, National Institute of Advanced Industrial Science and Technology (AIST):
National Projects on Wide Bandgap Semicondutors in Japan and Related Activities at Tsukuba
10:10 - 10:40    Key Note

Victor Veliadis, PowerAmerica Institute:
Accelerated Commercialization of Wide Bandgap Semiconductors in the United States

10:40 - 11:00 Coffee, Exhibition  
11:00 - 11:30   

Key Note
Hans Joachim Würfl, FBH - Ferdinand Braun Institut (FBH):
Exploring new frontiers of III/V power electronics:
Boosting speed and high voltage performance

11:30 - 11:50  SiC and GaN devices Jeffrey B. Casady, Wolfspeed:
Advances in ultra-low RDSON SiC power MOSFETs
11:50 - 12:10     Masaharu Nakanishi, ROHM Semiconductor GmbH:
ROHM’s WBG approach for Automotive/Industrial Power Systems
12:10 - 12:30    Mario Saggio, STMicroelectronics:
Silicon Carbide MOSFEts and Diodes for High Volume Market: Needs, Opportunities and Perspective
12:30 - 14:00  Lunch, Exhibition    
14:00 - 14:20  
  

Christopher Rocneanu, United Silicon Carbide Inc:
SiC Cascode and its advantages in power electronics

    

 

 

 

 

B2B Matchmaking
   

14:00 - 17:30

7 sessions


       
14:20 - 14:40   

Peter Friedrichs, Infineon AG:
Recent device developments at Infineon

14:40 - 15:00
 
Martin Domeij, ON Semiconductor:
Introducing ON's SiC MosFET - moving to higher currents with a 1200 V 20 mOhm die
15:00 - 15:20  Coffee, Exhibition   
15:20 - 15:40   

Jim Honea, Transphorm Inc:
Reliability testing of production 650V GaN FETs, with a preview of 900V GaN FETs

15:40 - 16:00
 
Feng Zhang, Global Power Technology (Beijing) Co. Ltd:
Opportunities and Challenges for Silicon Carbide MOSFETs and Diodes
16:00 - 16:20 Automotive & Traction 

Ty McNutt, Wolfspeed:
High Performance SiC Inverter Design for Automotive Platforms

16:20 - 16:40 
  

Thord Nilson, Inmotion Technologies:
Power Cycling test of Silicon Carbide Transistors

16:40 - 17:00 
 

Thomas Wiik, Bombardier Transportation Sweden AB:
"Green SiCtracdemo" – Car motion cooled SiC traction converter for Stockholm Metro

17:00 - 17:20  HV & Emerging SiC Applications 

Magnus Pihl, Micropower AV:
Introducing SiC in 10 kW battery charger in high production volume

17:20 - 17:40   

Carl-Mikael Zetterling, KTH Royal Institute of Technology:
Extreme environment electronics - radiation hard and high temperature SiC integrated circuits

17:40 - 19:30 Mingle     
19:30 - Dinner    
       

Tuesday May 23

 
08:30 - 09:00
Registration, Coffee  

 

09:00 - 09:20  Packaging

Lauren Boteler, Army research laboratory (ARL):
High Voltage and Co-Designed Power Modules

 

 

 

 

 

B2B Matchmaking

09:00 - 11:30

5 sessions


        
09:20 - 09:40    Arash Risseh, KTH Royal Institute of Technology:
Low-inductive planar module concepts for WBG power devices
09:40 - 10:00  Power Supplies & Emerging GaN Applications  Jim Witham, GaN Systems:
How GaN Systems' customers are unleashing the power of GaN
 
10:00 - 10:20    Tatsuo Morita, Panasonic Industrial Device Europe GmbH:
Commercialized 600 V normally-off GaN device and its applications
10:20 - 10:40  Coffee, Exhibition    
10:40 - 11:00   

Niklas Langmaack, Technische Universität Braunschweig:
Impact of Wide-Band-Gap Semiconductor Devices on the Design of Electronic Power Converters

11:00 - 11:20    Kent Bertilsson, Mid Sweden University/SEPS Technologies:
Compact kW DC/DC converters
11:20 - 11:40  Robustness & reliability  Alberto Castellazzi, University of Nottingham:
Single pulse ruggedness and repetitive stress aging of SiC Power MOSFETs under overload conditions
11:40 - 13:10  Lunch, Exhibition

 

 
13:10 - 13:30 Late News 1

Erik Velander, Bombardier Transportation:
An Ultra-Low Loss Inductorless dv/dt Filter Concept for Medium Power Voltage Source Motor Drive Converters with SiC Device

 
13:30 - 13:50 
 

Adolf Schöner, Ascatron AB:
High performing 3DSiC JBS Diodes for different Voltage Classes

 

 

 

B2B Matchmaking

13:30 - 16:30

6 sessions


     
13:50 - 14:30 Market & Roadmap 

Hong Lin, Yole Développement:
GaN & SiC power devices – Market overview

14:30 - 15:30 Panel Discussion

Chair: Hong Lin, Yole Développement
Remaining key challeges for WBG and business models

Jeffrey B. Casady, Wolfspeed
Peter Friedrichs, Infineon AG
Tatsuo Morita, Panasonic Industrial Device Europe GmbH
Mario Saggio, STMicroelectronics
Jim Honea, Transphorm Inc.

15:30 - 15:50  Late News 2

Patrick Palmer, University of Cambridge:
Wide band gap circuit optimisation and performance comparison

15:50 - 16:10 
 

Edward Shelton , University of Cambridge:
High Speed GaN Switching

16:10 - 16:30   

Vanya Darakchieva, Linköping University:
Center for III-Nitride technology, C3NiT-Janzen-: research vision and highlights

16:30 - 16:45

Closing remarks

Hans-Peter Nee, KTH Royal Institute of Technology   
16:45
 
End of workshop     

 

 

Registration
closed since 18 May 2017
Organisers
Schedule
Registration 27 Feb – 18 May
Meeting Selection 27 Feb – 19 May
Event 21 May – 23 May
Details
Language English
Costs Costs and Payment
Venue Hotel Birger Jarl
Bilateral Meetings
Participants 64
Meetings 37
Participants
Austria 1
Canada 1
China 6
Denmark 4
Finland 1
France 3
Gambia 1
Germany 19
Ireland 1
Italy 3
Japan 2
Netherlands 2
Nigeria 1
Norway 6
Russia 1
Sweden 49
Switzerland 1
United Arab Emirates 1
United Kingdom 7
USA 6
Total 116
Profile Views
Before Event1136
After Event 918
Total2054