ISiCPEAW 2016

Programme 

Below you find the programme for the two workshop days and the Friday tutorial.
The programme might still be subjected to changes. The final programme will be distributed to all participants.

A 2016 novelty is that the B2B Matchmaking is open during the entire workshop.
In order to reduce collisions between your meetings and talks you wish to attend:
Please check the programme and choose your matchmaking availability accordingly.

 

Wednesday May 18

08:30 - 09:10 Registration, Coffee
   
09:10 - 09:20 Welcome Mietek Bakowski, Acreo Swedish ICT AB
                                                              
09:20 - 09:40
Strategic session

Pierre-Jean Rigole, Swedish Energy Agency:
The Swedish Energy  Agency Strategy within Wide Bandgap Materials

 
09:40 - 10:00
 

Herbert Pairitsch, Infineon Technologies Austria AG:
PowerBase - Enhanced substrates and GaN pilot lines enabling compact power applications

 

 

 

 

B2B Matchmaking
   

09:30 - 12:30

6 sessions

       
10:00 - 10:20

 

Teresita Qvarnström, Acreo Swedish ICT AB:
Green Power Electronics. New effort to speed up the green transition

10:20 - 10:40 Coffee, Exhibition   
10:40 - 11:10

Device news

Key Note
Jeffrey B. Casady, Wolfspeed:

New developments in low RDSON 900V and medium voltage SiC MOSFETs

11:10 - 11:30

 

Naoyuki Kizu, ROHM Semiconductor GmbH:
Evolution of SiC Technology for Industrial Application

11:30 - 11:50
 

Fanny Björk, Infineon Technologies:
New 1200 V CoolSiC™ MOSFET

11:50 - 12:10  

Martin Domeij, Fairchild Semiconductor:
Schottky diode production and MOSFET development in 150 mm SiC

12:10 - 12:30  

Arun Gowda, General Electric:
GE Silicon Carbide Overview

12:30 - 14:00 Lunch, Exhibition    
14:00 - 14:20 Device news, cont.

Christopher Rocneanu, United Silicon Carbide Inc:
SiC Cascode solution

    

 

 

 

 

B2B Matchmaking
   

14:00 - 18:30

9 sessions

       
14:20 - 14:40  

Thomas Heinzel, Fuji Electric Europe:
Advanced SiC devices with new packaging technology and their applications

14:40 - 15:00  

Adolf Schöner, Ascatron AB:
Buried Grid Design & Technology: A Way to Improve SiC Device Performance

15:00 - 15:20 Coffee, Exhibition  
15:20 - 15:50 Automotive & Traction

Key Note
Kinimori Hamada, Toyota Motor Corporation:

Toyota's challenge of applying SiC power semiconductors to environmentally vehicles and its update

15:50 - 16:10  

Shuhei Nakata, Mitsubishi Electric:
Development of High Voltage SiC Devices and Its Applications 

16:10 - 16:30   Lars Lindberg, Inmotion Technologies:
SiC DC/DC converter for Hybrid and Full Electric Heavy Vehicles
16:30 - 17:00
HV & Emerging applications 

Key Note
Ralf Mario Burkart, ETH:
Cost-Aware Multi-Objective Optimization of SiC Power Electronic Converter Systems

17:00 - 17:20  

Stig Munk-Nielsen, Aalborg University:
Packaging and test of 10 kV SiC devices

17:20 - 17:40
 

Per Ranstad, General Electric Power Sweden:
System Aspects of SiC Components in an Industrial Power Converter

17:40 - 18:00   Tommy Kjellqvist, Vidar Wernöe,
Elektronikkonsult AB:
SiC in frequency converters – Power savings and reliability
18:00 - 19:30 Mingle

 

 
19:30 - Dinner    
       

Thursday May 19

 
08:30 - 09:00
Registration, Coffee  

 

09:00 - 09:30

 Packaging

Key Note
Miao-xin Wang, Schneider Electric:
GaN or SiC? Schneider Electric team's experience in designing 2 kW DC/AC inverter for Little Box Challenge

 

 

 

 

 

B2B Matchmaking

09:00 - 12:30

7 sessions

        
09:30 - 09:50
  Stefan Haeuser, Semikron Elektronik GmbH & Co. KG:
400 A SiC Power Module with 1nH Commutation Inductance
09:50 - 10:10  

Ty McNutt, Wolfspeed:
Application of High Performance SiC Power Modules and Medium Voltage Module Status

10:10 - 10:30
  Maximilian Slawinski, Infineon Technologies:
Demonstration of Infineon SiC MOSFET module performance within a 100 kHz DC/DC converter
10:30 - 11:00 Coffee, Exhibition  
11:00 - 11:30

GaN session

 

Key Note
Tatsuo Morita, Panasonic Industrial Devices Europe GmbH:
Latest technologies of 600V-class normally-off GaN power transistor

11:30 - 11:50  

Luc Van de Perre, Transphorm:
650 V GaN in mass production

11:50 - 12:10  

Elena Barbarini, System Plus Consulting:
SJ MOSFET, GaN on Si or SiC: Technology and Cost comparison of medium power devices

12:10 - 12:30

 

Ilja Belov, JTH/SP/SAAB:
Reliability study of GaN HEMTs
12:30 - 14:00 Lunch, Exhibition

 

 
14:00 - 14:35 Market & Roadmap

Key Note
Hong Lin, Yole Développement
:
Market and prospects

 

 

 

B2B Matchmaking

14:00 - 16:30

5 sessions

     
14:45 - 16:00

Panel Discussion

Chair: Hong Lin, Yole Développement

Jeffrey B. Casady, Wolfspeed
Martin Domeij, Fairchild Semiconductor
Kimimori Hamada, Toyota Motor Corporation
Philip Zuk, Transphorm
Gerald Deboy, Infineon Technologies
Elena Barbarini, System Plus Consulting

Refreshments served in the room during panel session

16:00 - 16:20

Late News

Martin Lindahl, Bombardier Transportation:
Testing & Evaluation of SiC devices

16:20 - 16:40  

Magnus Svensson, Smart Electronic Systems:
A
strategic innovation program for the Swedish electronics industry

16:40 - 17:00

Closing remarks

Hans-Peter Nee, KTH Royal Institute of Technology 
 
17:00  End of workshop
   
       

Friday May 20; Tutorial

09:00 - 09:30
Registration, Coffee
   
09:30 - 10:15

SiC devices

Mietek Bakowski, Acreo Swedish ICT AB:
Overview of device types and application areas
Development trends and challenges
Material and technology curves
Basic limitations
Reliability issues

 
10:15 - 11:00  Packaging 1

Klas Brinkfeldt, Swerea IVF:
Sintered Silver Materials

  • Material properties
  • Process
  • Reliability

Symmetric and low inductance packages for SiC

 
11:00 - 11:45 System & Gate Drivers

Hans-Peter Nee and Diane–Perle Sadik,
Electrical Power and Energy Systems, KTH Royal Institute of Technology:
Devices in power conversion systems
Drivers for

  • JFETs - DRC, SPGD and Dual function
  • BJTs - Dual source, Proportional
  • MOSFETs – discretes and power modules
 
11:45 - 13:00 Lunch    
13:00 - 13:45 System & Reliability

Hans-Peter Nee and Diane–Perle Sadik,
Electrical Power and Energy Systems, KTH Royal Institute of Technology:

Short-circuit protection

Examples of power converters

  • 40 kW/>99.6 % efficient inverter
  • 6 kW/250 kHz DC/DC converter
  • 300 kW automotive inverter with MOSFET power modules

Aspects on reliability

 
13:45 - 14:25  Packaging 2

Tag Hammam, Swerea KIMAB:
SiC Power Electronics Packaging – an introduction

  • Packaging – main function
  • Different types of packaging concepts
  • SiC die compared to Si die
  • Critical parts in a power module: Die bonding, Wire bonding, Encapsulation, Electrical connections 
  • Thermal resistance from junction to heat sink
  • Mechanical stress and material fatigue
  • Example of commercial modules
 
14:25 - 14:45 Coffee    
14:45 - 15:25 Packaging 3 

Zsolt Toth-Pal, Swerea KIMAB:
Reliability Issues

  • Classification of failure mechanisms         
  • Failure analysis methods
  • Reliability testing and prediction
 
15:25 - 16:00
Power Module Design

Konstantin Kostov, Acreo Swedish ICT AB:
Power module parasitics and their effect on the switching performance

 
16:00  End of tutorial    

 

Registration
closed since 13 May 2016
Organisers
Schedule
Registration 29 Feb – 13 May
Meeting Selection 29 Feb – 16 May
Event 18 May – 20 May
Details
Language English
Costs Costs and Payment
Venue Courtyard Stockholm Kungsholmen Hotel
Bilateral Meetings
Participants 60
Meetings 27
Participants
Austria 4
Belgium 2
China 5
Denmark 2
France 6
Germany 13
Ireland 2
Italy 1
Japan 3
Korea 1
Latvia 1
Netherlands 1
Norway 2
Poland 1
Russia 5
Sweden 62
Switzerland 1
United Kingdom 4
USA 8
Total 124
Profile Views
Before Event1205
After Event 2713
Total3918